The importance of the anode field in controlling the generation rate of the donor states at the Si–SiO2 interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333953
Reference20 articles.
1. Electron trapping in SiO2 at 295 and 77 °K
2. Interface-State Generation in Radiation-Hard Oxides
3. The effects of water on oxide and interface trapped charge generation in thermal SiO2films
4. Location of positive charges in SiO2films on Si generated by vuv photons, x rays, and high‐field stressing
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