Nonsaturating velocity‐field characteristic of gallium arsenide experimentally determined from domain measurements
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1663701
Reference32 articles.
1. Transport Properties of GaAs
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3. DIRECT OBSERVATION OF THE DRIFT VELOCITY AS A FUNCTION OF THE ELECTRIC FIELD IN GALLIUM ARSENIDE
4. Potential distribution and field dependence of electron velocity in bulk GaAs measured with a point-contact probe
5. Determination of the negative differential mobility of n-type gallium arsenide using 8 mm-microwaves
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4. Five-valley model for the study of electron transport properties at very high electric fields in GaAs;Semiconductor Science and Technology;1991-09-01
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