Determination of the negative differential mobility of n-type gallium arsenide using 8 mm-microwaves
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference8 articles.
1. Instabilities of Current in III–V Semiconductors
2. Theory of negative-conductance amplification and of Gunn instabilities in "two-valley" semiconductors
3. Measurement of the negative differential mobility of electron in GaAs
Cited by 30 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Velocity-field characteristics of electrons in doped GaAs;Journal of Electronic Materials;1989-09
2. Electron velocity in GaAs: bulk and selectively doped heterostructures;Semiconductor Science and Technology;1989-07-01
3. Gunn-Hilsum Effect Electronics;Advances in Electronics and Electron Physics;1980
4. Negative Differential Mobility in Semiconductors;The Gunn-hilsum Effect;1979
5. Nonsaturating velocity‐field characteristic of gallium arsenide experimentally determined from domain measurements;Journal of Applied Physics;1974-07
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