DIRECT OBSERVATION OF THE DRIFT VELOCITY AS A FUNCTION OF THE ELECTRIC FIELD IN GALLIUM ARSENIDE
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1754751
Reference11 articles.
1. The Possibility of Negative Resistance Effects in Semiconductors
2. Transferred Electron Amplifiers and Oscillators
3. The intervalley transfer mechanism of negative resistivity in bulk semiconductors
4. Calculation of the velocity-field characteristic for gallium arsenide
5. Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV
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