Simple technique to determine the drain temperature in GaAs metal semiconductor field effect transistor-Reference-Cited by-同舟云学术

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Simple technique to determine the drain temperature in GaAs metal semiconductor field effect transistor

Published:2003-05-15 Issue:10 Volume:93 Page:6344-6346
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kameche Mohamed,Feham Mohamed

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1566475

Reference6 articles.

1. DIRECT OBSERVATION OF THE DRIFT VELOCITY AS A FUNCTION OF THE ELECTRIC FIELD IN GALLIUM ARSENIDE

2. GaAs MESFET simulation using PISCES with field-dependent mobility-diffusivity relation

3. Electron transport properties in GaAs at high electric fields

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Drain temperature determination in dual-gate GaAs MESFETs;Journal of Computational Electronics;2007-06-06

2. SIMPLE TECHNIQUES FOR DETERMINING THE SMALL-SIGNAL EQUIVALENT CIRCUIT OF MESFET’s;International Journal of Infrared and Millimeter Waves;2007-02-03

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