Author:
Kameche Mohamed,Feham Mohamed
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation,Radiation
Reference21 articles.
1. M. Berroth and R. Bosch, IEEE Trans. Micro. Theory and Techniques, 38, 891, (1990).
2. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, IEEE Trans. Micro. Theory and Techniques, 36, 1151, (1988).
3. M. Kameche, Etude et modélisation du transistor MESFET sur les Technologies GaAs, 4H-SiC et GaN pour des Applications Rf et Microondes en Télécommunications, Ph.D. Thesis, (University of Tlemcen, Algeria, 2005).
4. T. Gonzalez and D. Pardo, IEEE Trans. Electron Devices, 42, 605, (1995).
5. S. Chaudhari and M. B. Das, IEEE Electron Device Lett., 5, 244, (1984).
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