The origin of a highly resistive layer at a growth‐interrupted interface of GaAs grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338017
Reference8 articles.
1. Fabrication and numerical simulation of the permeable base transistor
2. Carrier compensation at interfaces formed by molecular beam epitaxy
3. Reduction of a Highly-Resistive Layer at an Interrupted-Interface of GaAs Grown by MBE
4. Arsenic passivation: a possible remedy for MBE growth-interruption problems
5. Molecular‐beam‐epitaxy GaAs regrowth with clean interfaces by arsenic passivation
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3. Selective area regrowth of n-GaAs with reduced interface carrier depletion using arsenic passivation;Journal of Crystal Growth;1999-05
4. Patterned regrowth of n-GaAs by molecular beam epitaxy using arsenic passivation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
5. Electrical Properties of Regrowth ZnSe Homointerfaces Formed by Molecular Beam Epitaxy;Japanese Journal of Applied Physics;1998-03-30
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