Temperature dependent segregation of metals at Si–SiO2 interfaces during oxygen ion bombardment
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118170
Reference13 articles.
1. A SIMS-XPS study on silicon and germanium under O+2 bombardment
2. Ion beam mixing and oxidation of a Si/Ge-multilayer under oxygen bombardment
3. Oxidation of silicon by low energy oxygen bombardment
4. Angular dependence of silicon oxide formation and gold segregation due to low-energy O2+ implantation
5. A quantitative study of copper segregation in silicon under oxygen ion beam bombardment using SIMS
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