Author:
Achanta Ravi S.,Gill William N.,Plawsky Joel L.
Subject
General Physics and Astronomy
Reference23 articles.
1. A time dependent dielectric breakdown model for field accelerated low-k breakdown due to copper ions
2. Copper ion drift in integrated circuits: Effect of boundary conditions on reliability and breakdown of low-k dielectrics
3. Copper ion transport induced dielectric failure: Inclusion of elastic drift and consequences for reliability
4. The effect of metallic barriers in inhibiting copper ion transport in low-k dielectrics: Implications for time-to-failure
5. F. Chen, O. Bravo, K. Chanda, P. McLaughlin, T. Sullivan, J. Gill, J. Lloyd, R. Kontra, and J. Aitken, in Proceedings of the 44th Annual International Reliability Physics Symposium (IEEE, New York, 2006), p. 46.
Cited by
11 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献