1. Key reliability issues for copper integration in damascene architecture
2. The effect of Cu diffusion on the TDDB behavior in a low-k interlevel dielectrics
3. F. Chen, O. Bravo, K. Chanda, P. McLaughlin, T. Sullivan, J. Gill, L. Lloyd, R. Kontra, and J. Aitken, Proceedings of the International Reliability Physics Symposium (IEEE, New York, 2006), p. 46.
4. N. Suzumura, S. Yamamoto, D. Kodama, K. Makabe, J. Komori, E. Murakami, S. Maegawa, and K. Kubota, Proceedings of the International Reliability Physics Symposium (IEEE, New York, 2006), p. 484.
5. Underlying physics of the thermochemical E model in describing low-field time-dependent dielectric breakdown in SiO2 thin films