Optical absorption of Fe in doped Ga2O3
Author:
Affiliation:
1. Department of Physics, University of Alabama at Birmingham, 1300 University Blvd., Birmingham, Alabama 35233, USA
2. Quantum Materials Group, Lawrence Livermore National Laboratory, Livermore, California 94550, USA
Funder
National Science Foundation
U.S. Department of Energy
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5124825
Reference30 articles.
1. Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing
2. Ga2O3 thin film for oxygen sensor at high temperature
3. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
4. 2.44 kV Ga2O3 vertical trench Schottky barrier diodes with very low reverse leakage current
5. A review of Ga2O3materials, processing, and devices
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