2.44 kV Ga2O3 vertical trench Schottky barrier diodes with very low reverse leakage current
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8601505/8614478/08614693.pdf?arnumber=8614693
Cited by 40 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Enhancing β-Ga2O3 Schottky Barrier Diodes’ Performance Through Low-Temperature Post-Annealing: Achieving Optimal Forward Current–Voltage Characteristics;IEEE Transactions on Electron Devices;2024-09
2. High breakdown voltage of 1.3 kV and low turn-on voltage of 0.48 V β-Ga2O3 heterojunction barrier Schottky diode with tungsten Schottky contact;Applied Physics Express;2024-06-01
3. Research of over-2kV, 2.35GW/cm2 β-Ga2O3 Vertical Superjunction Schottky Barrier Diodes;2024 IEEE 2nd International Conference on Power Science and Technology (ICPST);2024-05-09
4. 2.5kV/3.78mΩ⋅cm² Low Forward Voltage Vertical β-Ga₂O₃ Schottky Rectifier With Field Plate Assisted Deep Mesa Termination;IEEE Electron Device Letters;2024-05
5. Ga₂O₃ Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction;IEEE Transactions on Electron Devices;2024-04
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