High-temperature annealing behavior of deep levels in 1MeV electron irradiated p-type 6H-SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2964184
Reference21 articles.
1. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy
2. Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide
3. Deep levels created by low energy electron irradiation in 4H-SiC
4. Impacts of growth parameters on deep levels in n-type 4H-SiC
5. Influence of growth conditions on irradiation induced defects in low doped 4H-SiC epitaxial layers
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Positron annihilation spectroscopy investigation of vacancy defects in neutron-irradiated3C-SiC;Physical Review B;2017-03-10
2. Multi-nuclear NMR study of polytype and defect distribution in neutron irradiated silicon carbide;Journal of Nuclear Materials;2014-01
3. Single-Alpha-Particle-Induced Charge Transient Spectroscopy of the 6H-SiC ${\hbox{p}}^{+}{\hbox{n}}$ Diode Irradiated With High-Energy Electrons;IEEE Transactions on Nuclear Science;2011-12
4. Electrically Active Defects in Electron Irradiated P-Type 6H-SiC;Materials Science Forum;2011-03
5. The effects of displacement threshold irradiation energy on deep levels in p-type 6H-SiC;Journal of Physics: Condensed Matter;2011-01-27
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