The effects of displacement threshold irradiation energy on deep levels in p-type 6H-SiC-Reference-Cited by-同舟云学术

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The effects of displacement threshold irradiation energy on deep levels in p-type 6H-SiC

Published:2011-01-27 Issue:6 Volume:23 Page:065803
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Alfieri G,Kimoto T

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/23/i=6/a=065803/pdf

Reference25 articles.

1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy

2. Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment

3. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

4. Radiotracer identification of a Ta-related deep level in 4H–SiC

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