Carbon-related defects in carbon-doped GaAs by high-temperature annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365890
Reference24 articles.
1. Surface effect‐induced fast Be diffusion in heavily doped GaAs grown by molecular‐beam epitaxy
2. Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy
3. Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy
4. Comparison of gallium and arsenic precursors for GaAs carbon doping by organometallic vapor phase epitaxy using CCl4
5. Heavily dopedp‐GaAs grown by low‐pressure organometallic vapor phase epitaxy using liquid CCl4
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