Comparison of gallium and arsenic precursors for GaAs carbon doping by organometallic vapor phase epitaxy using CCl4
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106712
Reference10 articles.
1. Carbon doping of III–V compounds grown by MOMBE
2. Carbon diffusion in undoped,n‐type, andp‐type GaAs
3. p‐type doping limit of carbon in organometallic vapor phase epitaxial growth of GaAs using carbon tetrachloride
4. Very high carbon incorporation in metalorganic vapor phase epitaxy of heavily dopedp‐type GaAs
5. Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: Arsine versus tertiarybutylarsine
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