Nickel oxide-induced crystallization of silicon for use in thin film transistors with a SiNx diffusion filter
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2908036
Reference17 articles.
1. Recrystallization of amorphous silicon films deposited by low‐pressure chemical vapor deposition from Si2H6gas
2. Low-temperature (
3. Location control of crystal grains in excimer laser crystallization of silicon thin films
4. Formation of location-controlled crystalline islands using substrate-embedded seeds in excimer-laser crystallization of silicon films
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3. Low-Temperature Crystallization of Silicon Films Directly Deposited on Glass Substrates Covered with Yttria-Stabilized Zirconia Layers;Japanese Journal of Applied Physics;2010-10-20
4. Crystallization of amorphous silicon thin films using nanoenergetic intermolecular materials with buffer layers;Journal of Crystal Growth;2009-02
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