Effects of rapid thermal annealing conditions on GaInNAs band gap blueshift and photoluminescence intensity
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2200877
Reference16 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. GaInNAs for GaAs based lasers for the 1.3 to 1.5μm range
3. Development of InGaAsN-based 1.3 m VCSELs
4. Effects of rapid thermal annealing on GaInNAs/GaAs multiple quantum wells
5. (Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen
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