GaInNAs for GaAs based lasers for the 1.3 to 1.5μm range
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
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4. Monolithic VCSEL with InGaAsN active region emitting at 1.28μm and CW output power exceeding 500μW at room temperature;Steinle;Electron. Lett.,2001
5. GaInAsN/GaAs laser diodes operating at 1.52μm;Fischer;Electron. Lett.,2000
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