Photoluminescence characteristic of as-grown and thermally annealed n- and p-type modulation-doped Ga0.68In0.32NxAs1-x/GaAs quantum well structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
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