Highly anisotropic electron mobilities of GaAs/In0.2Ga0.8As/Al0.3Ga0.7As inverted high electron mobility transistor structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105900
Reference13 articles.
1. Defects in epitaxial multilayers
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3. Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy
4. Anisotropic Transport in InGaAs/GaAs Heterostructures Grown by Movpe
5. Orientation dependence of mismatched InxAl1−xAs/In0.53Ga0.47As HFETs
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1. Impact of Defects on the Performance of High-Mobility Semiconductor Devices;High Mobility Materials for CMOS Applications;2018
2. Semiconductor-insulator Interfaces, High κ Dielectrics on (In)GaAs;Wiley Encyclopedia of Electrical and Electronics Engineering;2014-04-25
3. Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-03
4. Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3(Gd2O3) as the gate dielectric;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-05
5. Anisotropic structural and electronic properties of InSb/AlxIn1−xSb quantum wells grown on GaAs (001) substrates;Journal of Crystal Growth;2003-04
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