Anisotropic Transport in InGaAs/GaAs Heterostructures Grown by Movpe-Reference-Cited by-同舟云学术

Anisotropic Transport in InGaAs/GaAs Heterostructures Grown by Movpe

Published:1989 Issue: Volume:160 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Sun Qing,Morris D.,Lacelle C.,Roth A.P.

Abstract

AbstractAnisotropic electron transport has been observed in InxGa1-xAs/GaAs heterostructures grown by MOVPE on (001) and intentionally misoriented GaAs substrates. The low field electron mobilities in two perpendicular directions are found to be higher in the [110] direction than in the [110] direction. The ratio of µ[110]/µ[110] derived from Hall measurements is related to the degree of substrate misorientation as well as epilayer composition. Finally, the photoluminescence spectra are polarized along orthogonal <110> directions. These anisotropic properties are directly related to the anisotropy of [110] and [110] dislocations due to lattice mismatch between the substrates and the layers.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference19 articles.

1. Interface dislocation structures in InxGa1−xAs/GaAs mismatched epitaxy

2. A new type of source generating misfit dislocations

3. Relaxation of strained‐layer semiconductor structures via plastic flow

4. The effects of substrate orientation on the optical properties of InGaAs epitaxial layers grown by low-pressure metal organic vapour-phase epitaxy

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