Anisotropic electrical conduction in GaAs/In0.2Ga0.8As/Al0.3Ga0.7As strained heterostructures beyond the critical layer thickness
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351497
Reference22 articles.
1. An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT
2. Strained-quantum-well, modulation-doped, field-effect transistor
3. Conduction‐band offset in strained Al0.15Ga0.85As/In0.15Ga0.85As/GaAs pseudomorphic structures
4. Defects in epitaxial multilayers
5. Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures
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1. Impact of Defects on the Performance of High-Mobility Semiconductor Devices;High Mobility Materials for CMOS Applications;2018
2. Real-time reflectance-difference spectroscopy during the epitaxial growth of InAs/GaAs/(001);Applied Surface Science;2017-11
3. Anisotropic transport properties in InAs/AlSb heterostructures;Applied Physics Letters;2010-12-13
4. Formation energies and equilibrium configurations of dislocation arrays with alternating Burgers vectors in layered heterostructures;Journal of Crystal Growth;2010-06
5. Electrical Properties;Materials Science in Microelectronics II;2006
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