Conduction‐band offset in strained Al0.15Ga0.85As/In0.15Ga0.85As/GaAs pseudomorphic structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102063
Reference21 articles.
1. Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors with very high transconductance
2. Strained-layer InGaAs-GaAs-AlGaAs photopumped and current injection lasers
3. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures
4. Energy-gap discontinuities and effective masses forGaAs−AlxGa1−xAsquantum wells
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1. Low‐frequency noise measurements of AlxGa1−xAs/InyGa1−yAs/GaAs high electron mobility transistors;Journal of Applied Physics;1995-08-15
2. Improved photoluminescence properties of highly strained InGaAs/GaAs quantum wells grown by molecular‐beam epitaxy;Journal of Applied Physics;1995-08
3. Photoluminescence studies of strained InxGa1−xAs‐Al0.28Ga0.72As heterostructures grown by molecular‐beam epitaxy;Journal of Applied Physics;1994-07
4. A photoluminescence study of the effect of well thickness in strained InGaAs/AlGaAs heterostructures grown by molecular beam epitaxy;Journal of Materials Research;1994-07
5. Study of structural changes of tellurium thin films on polymer substrates by electrical measurements and transmission electron microscopy;Thin Solid Films;1994-06
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