Orientation dependence of mismatched InxAl1−xAs/In0.53Ga0.47As HFETs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. An In0.52Al0.48As/n+-In0.53Ga0.47As MISFET with a heavily doped channel
2. S.R. Bahl, W.J. Azzam and J.A. del Alamo, IEEE Trans. Electron Devices, submitted.
3. Photoluminescence broadening mechanisms in high quality GaInAs‐AlInAs quantum well structures
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