Growth conditions and device performance of InGaAs/AlGaAs pseudomorphic inverted high electron mobility transistor-Reference-Cited by-同舟云学术

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Growth conditions and device performance of InGaAs/AlGaAs pseudomorphic inverted high electron mobility transistor

Published:1995-05 Issue: Volume:150 Page:1256-1260
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kawaguchi T.,Sato M.,Fujishiro H.I.,Nishi S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference5 articles.

1. Anisotropy in electronic transport of modulation doped structures having strained InGaAs wells

2. Anisotropic electron mobilities of Al0.3Ga0.7As/InxGa1-xAs/GaAs high electron mobility transistor structures

3. Highly anisotropic electron mobilities of GaAs/In0.2Ga0.8As/Al0.3Ga0.7As inverted high electron mobility transistor structures

4. Orientation dependence of mismatched InxAl1−xAs/In0.53Ga0.47As HFETs

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