Photoluminescence broadening mechanisms in high quality GaInAs‐AlInAs quantum well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99185
Reference6 articles.
1. Determination of the microscopic quality of InGaAs‐InAlAs interfaces by photoluminescence—Role of interrupted molecular beam epitaxial growth
2. Extremely high-quality GaInAs/AlInAs single quantum wells grown by molecular beam epitaxy
3. Role of interface roughness and alloy disorder in photoluminescence in quantum‐well structures
4. A study of novel growth approaches to influence the growth mechanism and interface quality in heterostructures grown by molecular beam epitaxy
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