Mechanisms of valley currents in InAs/AlSb/GaSb resonant interband tunneling diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360568
Reference7 articles.
1. New negative differential resistance device based on resonant interband tunneling
2. Peak‐to‐valley current ratios as high as 50:1 at room temperature in pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes
3. Interband tunneling in single‐barrier InAs/AlSb/GaSb heterostructures
4. Interband tunneling in single‐barrier InAs/AlSb/GaSb heterostructures
5. Quantization effect on capacitance‐voltage and current‐voltage characteristics of an InAs/AlSb/GaSb interband tunneling diode
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1. Defect and temperature dependence of tunneling in InAs/GaSb heterojunctions;Applied Physics Letters;2015-09-28
2. Antimonide-based compound semiconductors for electronic devices: A review;Solid-State Electronics;2005-12
3. Experimental Investigation of the Temperature Dependence of InAs–AlSb–GaSb Resonant Interband Tunnel Diodes;IEEE Transactions on Electron Devices;2004-07
4. Vertical transport and electroluminescence in InAs/GaSb/InAs structures: GaSb thickness and hydrostatic pressure studies;Physical Review B;2002-06-19
5. Temperature dependence of Sb-heterostructure millimetre-wave diodes;Electronics Letters;2002
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