Defect and temperature dependence of tunneling in InAs/GaSb heterojunctions
Author:
Affiliation:
1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Funder
National Science Foundation (NSF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4931905
Reference17 articles.
1. Low-Voltage Tunnel Transistors for Beyond CMOS Logic
2. Band-Edge Steepness Obtained From Esaki/Backward Diode Current–Voltage Characteristics
3. InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field
4. Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned
5. Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V
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