Novel gate-recessed vertical InAs/GaSb TFETs with record high I<inf>ON</inf> of 180 μA/μm at V<inf>DS</inf> = 0.5 V-Reference-Cited by-同舟云学术

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Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V

Published:2012-12 Issue: Volume: Page:
ISSN:
Container-title:2012 International Electron Devices Meeting
language:
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Author:

Guangle Zhou ,Li R.,Vasen T.,Qi M.,Chae S.,Lu Y.,Zhang Q.,Zhu H.,Kuo J.-M,Kosel T.,Wistey M.,Fay P.,Seabaugh A.,Huili Xing

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6471855/6478950/06479154.pdf?arnumber=6479154

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