Heterogeneous integration of InAs/GaSb tunnel diode structure on silicon using 200 nm GaAsSb dislocation filtering buffer-Reference-Cited by-同舟云学术

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Heterogeneous integration of InAs/GaSb tunnel diode structure on silicon using 200 nm GaAsSb dislocation filtering buffer

Published:2018-10 Issue:10 Volume:8 Page:105108
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Liu J.-S.¹,Clavel M.¹^ORCID,Pandey R.²,Datta S.³,Xie Y.⁴,Heremans J. J.⁴,Hudait M. K.¹^ORCID

Affiliation:

1. Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA

2. Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

3. Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA

4. Department of Physics, Virginia Tech, Blacksburg, Virginia 24061, USA

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/1.5042064

Reference66 articles.

1. Tunnel Field-Effect Transistors: State-of-the-Art

2. Low-Voltage Tunnel Transistors for Beyond CMOS Logic

3. Tunnel field-effect transistors as energy-efficient electronic switches

4. Tunneling Transistors Based on Graphene and 2-D Crystals

5. U. E. Avci and I. A. Young, IEDM Tech. Dig., 2013, p. 4.3.1.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical performance of InAs/GaAs0.1Sb0.9 heterostructure junctionless TFET with dual-material gate and Gaussian-doped source;Semiconductor Science and Technology;2020-07-24

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