Quantization effect on capacitance‐voltage and current‐voltage characteristics of an InAs/AlSb/GaSb interband tunneling diode
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346222
Reference14 articles.
1. Resonant tunneling in AlSb/InAs/AlSb double‐barrier heterostructures
2. Resonant tunneling of holes in AlSb/GaSb/AlSb double‐barrier heterostructures
3. Demonstration of large peak‐to‐valley current ratios in InAs/AlGaSb/InAs single‐barrier heterostructures
4. New negative differential resistance device based on resonant interband tunneling
5. Negative differential resistance in AlGaSb/InAs single‐barrier heterostructures at room temperature
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1. New tunnel diode for zero-bias direct detection for millimeter-wave imagers;SPIE Proceedings;2001-08-21
2. Sb-heterostructure zero-bias diodes for direct detection beyond 100 GHz;SPIE Proceedings;2000-12-18
3. Tunneling under Pressure: High-Pressure Studies of Vertical Transport in Semiconductor Heterostructures;High Pressure in Semiconductor Physics II;1998
4. The physics and technology of gallium antimonide: An emerging optoelectronic material;Journal of Applied Physics;1997-05
5. Mechanisms of valley currents in InAs/AlSb/GaSb resonant interband tunneling diodes;Journal of Applied Physics;1995-11-15
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