Peak‐to‐valley current ratios as high as 50:1 at room temperature in pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351085
Reference7 articles.
1. Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak‐to‐valley current ratios of 30 at room temperature
2. A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
3. Resonant tunneling in AlSb/InAs/AlSb double‐barrier heterostructures
4. Lattice matched and pseudomorphic In0.53Ga0.47As/InxAl1−xAs resonant tunneling diodes with high current peak‐to‐valley ratio for millimeter‐wave power generation
5. Low temperature MBE growth of high quality AlGaAs
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