Ultrafast carrier dynamics in an InGaN thin film
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1847705
Reference20 articles.
1. Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells
2. Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells
3. Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31
4. Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions
5. Piezoelectric Franz–Keldysh effect in strained GaInN/GaN heterostructures
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1. Carrier Dynamics in InGaN/GaN on the Basis of Different In Concentrations;Applied Sciences;2019-06-03
2. Structural, optical and Carrier dynamics of self-assembled InGaN nanocolumns on Si(111);Superlattices and Microstructures;2018-05
3. Ultrafast Carrier dynamics of InxGa1-xN nanostructures grown directly on Si(111);Optical Materials;2018-05
4. Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods;Optical Materials Express;2017-01-05
5. Study on the Ultrafast Carrier Dynamics in the Bulk In0.265GaN Thin Film;Energy Procedia;2015-12
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