Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions-Reference-Cited by-同舟云学术

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Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions

Published:2004-04-05 Issue:14 Volume:84 Page:2506-2508
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cheng Yung-Chen,Lin En-Chiang,Wu Cheng-Ming,Yang C. C.,Yang Jer-Ren,Rosenauer Andreas,Ma Kung-Jen,Shi Shih-Chen,Chen L. C.,Pan Chang-Chi,Chyi Jen-Inn

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1690872

Reference13 articles.

1. Spiral growth of InGaN/InGaN quantum wells due to Si doping in the barrier layers

2. Mechanisms for photon-emission enhancement with silicon doping in InGaN/GaN quantum-well structures

3. High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration

4. Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers

5. Luminescence spectra from InGaN multiquantum wells heavily doped with Si

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1. Surface plasmon coupling effects on the behaviors of radiative and non-radiative recombination in an InGaN/GaN quantum well;Journal of Applied Physics;2023-01-12

2. Effect of High Temperature Treatment on the Photoluminescence of InGaN Multiple Quantum Wells;Crystals;2022-06-14

3. Temperature-dependent photoluminescence of thin tetraphenylporphyrin-based thin films and their composites with C60 fullerene;Journal of Materials Science: Materials in Electronics;2022-06-06

4. The investigation of photoluminescence properties in InxGa1-xN/GaN multiple quantum wells structures with varying well number;Physica B: Condensed Matter;2022-04

5. Photoluminescence of green InGaN/GaN MQWs grown on pre-wells*;Chinese Physics B;2020-12-01

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