High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369620
Reference16 articles.
1. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
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3. High responsitivity intrinsic photoconductors based on AlxGa1−xN
4. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
5. Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphire
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