High nitrogen composition–induced low interfacial roughness of GaAs 0.978 N 0.022 /GaAs multiple quantum wells grown through solid-source molecular beam epitaxy-Reference-Cited by-同舟云学术

High nitrogen composition–induced low interfacial roughness of GaAs 0.978 N 0.022 /GaAs multiple quantum wells grown through solid-source molecular beam epitaxy

Published:2017-04 Issue: Volume:88 Page:242-247
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Biswas Mahitosh,Tongbram Binita,Shinde Nilesh,Makkar Roshan Lal,Bhatnagar Anuj,Chakrabarti Subhananda

Funder

Department of Science and Technology, India

Riber

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference41 articles.

1. Growth of GaAsN alloys by low-pressure metalorganic chemical vapor deposition using plasma-cracked NH3;Weyers;Appl. Phys. Lett.,1993

2. Incorporation effects in MOCVD-grown (In)GaAsN using different nitrogen precursors;Ptak;J. Crystal Growth,2002

3. S. Kurtz, S.W. Johnston, J.F. Geisz, D.J. Friedman, A.J. Ptak. Effect of nitrogen concentration on the performance of GaInNAs solar cells, 31st IEEE PVSC (2005).

4. Enhancement of the direct optical transition in nanocrystallized GaAsN alloys;Gwo;Phys. Rev. B,2001

5. Electronic structure and phase stability of GaAs1-xNx alloys;Neugebauer;Phys. Rev. B,1994

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of eigenstates interface-modulated in GaAs (631) multi-quantum well heterostructures;Journal of Applied Physics;2020-12-28

2. Si doping mechanism in Si doped GaAsN;Journal of Crystal Growth;2019-05

3. Vertical strain-induced dot size uniformity and thermal stability of InAs/GaAsN/GaAs coupled quantum dots;Journal of Alloys and Compounds;2018-06