Incorporation effects in MOCVD-grown (In)GaAsN using different nitrogen precursors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
3. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
4. 1-eV solar cells with GaInNAs active layer
5. Incorporation of nitrogen into GaAsN grown by MOCVD using different precursors
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2. Dilute nitride III-V nanowires for high-efficiency intermediate-band photovoltaic cells: Materials requirements, self-assembly methods and properties;Progress in Crystal Growth and Characterization of Materials;2020-11
3. High nitrogen composition–induced low interfacial roughness of GaAs 0.978 N 0.022 /GaAs multiple quantum wells grown through solid-source molecular beam epitaxy;Materials Research Bulletin;2017-04
4. Growth far from equilibrium: Examples from III-V semiconductors;Applied Physics Reviews;2016-12
5. Control of hydrogen and carbon impurity inclusion during the growth of GaAsN thin film by atomic layer epitaxy;Japanese Journal of Applied Physics;2015-12-16
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