Direct comparison of plain and oxidized metal Schottky contacts on β-Ga2O3-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Direct comparison of plain and oxidized metal Schottky contacts on β-Ga2O3

Published:2019-01-21 Issue:3 Volume:114 Page:033502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hou C.¹²^ORCID,Gazoni R. M.²³^ORCID,Reeves R. J.²³^ORCID,Allen M. W.¹²^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Canterbury, Christchurch 8140, New Zealand

2. MacDiarmid Institute for Advanced Materials and Nanotechnology, Wellington 6012, New Zealand

3. School of Physical and Chemical Sciences, University of Canterbury, Christchurch 8140, New Zealand

Funder

University of Canterbury

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5079423

Reference42 articles.

1. Guest Editorial: The dawn of gallium oxide microelectronics

2. A review of Ga2O3materials, processing, and devices

3. Perspective—Opportunities and Future Directions for Ga2O3

4. Conductivity in transparent oxide semiconductors

5. Surface Electron Accumulation and the Charge Neutrality Level inIn2O3

Cited by 61 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The influence of oxygen partial pressure on the properties of sputtered vertical NiO/β-Ga2O3 heterojunction diodes;Materials Science in Semiconductor Processing;2024-12

2. Barrier height enhancement in β-Ga2O3 Schottky diodes using an oxygen-rich ultra-thin AlOx interfacial layer;Applied Physics Letters;2024-08-05

3. Gallium Oxide‐Based Field Effect Transistors;physica status solidi (a);2024-07-17

4. Over 6 MV/cm operation in β-Ga2O3 Schottky barrier diodes with IrO2 and RuO2 anodes deposited by molecular beam epitaxy;Journal of Vacuum Science & Technology A;2024-04-10

5. Modifying the Barrier Height of β-Ga₂O₃ Schottky Contacts Using Covalently Grafted Organic Layers;ACS Applied Electronic Materials;2024-02-19

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3