A sub kBT/q semimetal nanowire field effect transistor
Author:
Affiliation:
1. Tyndall National Institute, Lee Maltings, Dyke Parade, Cork T12 R5CP, Ireland
Funder
Science Foundation Ireland (SFI)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4960709
Reference19 articles.
1. A new three-terminal tunnel device
2. A vertical MOS-gated Esaki tunneling transistor in silicon
3. Vertical Si-Nanowire $n$-Type Tunneling FETs With Low Subthreshold Swing ($\leq \hbox{50}\ \hbox{mV/decade}$ ) at Room Temperature
4. Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires
5. Sub 60 mV/decade Switch Using an InAs Nanowire–Si Heterojunction and Turn-on Voltage Shift with a Pulsed Doping Technique
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