Orientation and size effects on electronic structure of rectangular cross-sectional Sn nanowires
Author:
Affiliation:
1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
2. Division of Electrical, Electronic and Infocommunications Engineering, Osaka University, Suita, Osaka 565-0871, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0050665
Reference41 articles.
1. Short-channel effects in SOI MOSFETs
2. Short-channel effects in subquarter-micrometer-gate HEMTs: simulation and experiment
3. Theory of the Junctionless Nanowire FET
4. Prediction of Large Enhancement of Electron Mobility in Direct Gap Ge1−xSnxAlloy
5. Impact of Source to Drain Tunneling on the Ballistic Performance of Si, Ge, GaSb, and GeSn Nanowire p-MOSFETs
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