Prediction of Large Enhancement of Electron Mobility in Direct Gap Ge1−xSnxAlloy-Reference-Cited by-同舟云学术

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Prediction of Large Enhancement of Electron Mobility in Direct Gap Ge1−xSnxAlloy

Published:2017-08-07 Issue:11 Volume:254 Page:1700244
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Mukhopadhyay Bratati¹,Sen Gopa¹,Basu Rikmantra²,Mukhopadhyay Shyamal³,Basu Prasanta Kumar¹

Affiliation:

1. Institute of Radio Physics and Electronics, University of Calcutta; 92 Acharya Prafulla Chandra Road Kolkata 700009 India

2. ECE Department, National Institute of Technology; A 7 Institutional Area, Narela Delhi 110040 India

3. ECE Department, Techno India - Batanagar; Maheshtala Kolkata 700141 India

Funder

Department of Science and Technology, Ministry of Science and Technology

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Device structures and carrier transport properties of advanced CMOS using high mobility channels

2. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

3. Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures

4. Germanium epitaxy on silicon

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3. Performance Analysis of Ge_1-zSn_z alloy-based Gate Underlap SiGe-Pocket DG-TFET;2023 8th International Conference on Computers and Devices for Communication (CODEC);2023-12-14

4. “GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes;Sensors;2023-08-24

5. Numerical investigation of a Ge_1-xSn_x-on-AlN waveguide and its sensing mechanism for the detection of trace gases in the mid-infrared regime;Journal of the Optical Society of America B;2023-05-04

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