Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires
Author:
Affiliation:
1. Division of Solid State Physics, Lund University, Box 118, S-22100, Lund, Sweden
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/nn204838m
Reference32 articles.
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4. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
5. Performance Enhancement in Multi Gate Tunneling Field Effect Transistors by Scaling the Fin-Width
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