Deep‐level transient charge spectroscopy of Sn donors in AlxGa1−xAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353189
Reference21 articles.
1. Deep donor levels (DXcenters) in III‐V semiconductors
2. Deep‐level admittance spectroscopy ofDXcenters in AlGaAs:Sn
3. Effect of local alloy disorder on emission kinetics of deep donors (DXcenters) in AlxGa1−xAs of low Al content
4. The Local-Environment-DependentDXCenters: Evidence for the Single Energy Level with a Specified Configuration
5. Transient current trap spectroscopy (TCTS) in GaAs/GaAlAs heterojunctions
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