Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4790621
Reference26 articles.
1. Planar aluminum-implanted 1400 V 4H silicon carbide p-n diodes with low on resistance
2. 2.6 kV 4H-SiC lateral DMOSFETs
3. 700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's)
4. Status and prospects for SiC power MOSFETs
5. Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift
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4. p-Type carrier concentration enhancement analysis of 4H–SiC by wet chemical laser doping;Materials Science in Semiconductor Processing;2022-06
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