Planar aluminum-implanted 1400 V 4H silicon carbide p-n diodes with low on resistance
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120241
Reference11 articles.
1. SiC Power Devices
2. Planar, ion implanted, high voltage 6H-SiC P-N junction diodes
3. SiC bipolar devices
4. Boron‐implanted 6H‐SiC diodes
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