Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift-Reference-Cited by-同舟云学术

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Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage drift

Published:2009-07-31 Issue:9 Volume:24 Page:095004
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Brosselard P,Pérez-Tomás A,Hassan J,Camara N,Jordà X,Vellvehí M,Godignon P,Millán J,Bergman J P

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode

2. Characterisation and Defects in Silicon Carbide

3. Properties and origins of different stacking faults that cause degradation in SiC PiN diodes

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Excimer laser doping for the fabrication of 4H-SiC power devices;Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXVIII;2023-03-17

2. Laser doping mechanism of 4H-SiC by KrF excimer laser irradiation using SiNx thin films;Japanese Journal of Applied Physics;2023-01-26

3. Modelling and Simulation of Design Variants for the Development of 4H-SiC Thyristors;Silicon;2022-03-01

4. Review of Silicon Carbide Processing for Power MOSFET;Crystals;2022-02-11

5. Increasing Laser-Doping Depth of Al in 4H-SiC by Using Expanded-Pulse Excimer Laser;Materials Science Forum;2019-07

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