700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's)-Reference-Cited by-同舟云学术

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700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's)

Published:1997-11 Issue:11 Volume:18 Page:518-520
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Agarwal A.K.,Casady J.B.,Rowland L.B.,Seshadri S.,Siergiej R.R.,Valek W.F.,Brandt C.D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx3/55/13902/00641431.pdf?arnumber=641431

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