Large scale surface structure formed during GaAs (001) homoepitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111004
Reference12 articles.
1. Direct observation of the growth-interruption effect for molecular-beam-epitaxy growth on GaAs(001) by scanning tunneling microscopy
2. Insituscanning tunneling microscopy observation of surface morphology of GaAs(001) grown by molecular beam epitaxy
3. An STM study of molecular-beam epitaxy growth of GaAs
4. Growth mode evolution during homoepitaxy of GaAs (001)
5. Surface Stoichiometry and Morphology of MBE Grown (001)GaAs through the Analysis of RHEED Oscillations
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