Enhancement of ovonic threshold switching characteristics using nanometer-scale virtual electrode formed within ultrathin hafnium dioxide interlayer-Reference-Cited by-同舟云学术

Enhancement of ovonic threshold switching characteristics using nanometer-scale virtual electrode formed within ultrathin hafnium dioxide interlayer

Published:2021-01-11 Issue:2 Volume:118 Page:022103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Jangseop¹^ORCID,Lee Sangmin¹^ORCID,Hwang Hyunsang¹^ORCID

Affiliation:

1. Center for Single Atom-Based Semiconductor Device and Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang 790-784, South Korea

Funder

Western Digital

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0034847

Reference24 articles.

1. Nanoionics-based resistive switching memories

2. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

3. A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications

4. Complementary resistive switches for passive nanocrossbar memories

5. Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy

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